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HiPerFASTTM IGBT with Diode ISOPLUS247TM
(Electrically Isolated Backside)
IXGR 32N60CD1
VCES IC25
VCE(SAT) tfi(typ)
= 600 V = 45 A = 2.7 V = 55 ns
Preliminary data sheet
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight 50/60 Hz, RMS t = 1 min leads-to housing Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 600 600 20 30 45 28 120 ICM = 64 @ 0.8 VCES 140 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A A W C C C C V~ g Features DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 TJ = 25C TJ = 125C 5.0 200 3 100 2.3 2.7 V A mA nA V Easy assembly High power density Very fast switching speeds for high frequency applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages * Patent pending G = Gate, E = Emitter, C = Collector, TAB = Collector
G C
ISOPLUS 247TM (IXGR) E 153432
E
Isolated backside*
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE
VCE = 600V VGE = 0 V VCE = 0 V, VGE = 20 V IC = IT, VGE = 15 V Note 1
(c) 2004 IXYS All rights reserved
DS98631D(06/04)
IXGR 32N60CD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 2700 VCE = 25 V, VGE = 0 V, f = 1 MHz 240 50 110 IC = IT, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IT, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IT, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 22 40 25 20 85 55 0.32 25 25 1 110 100 0.85 0.15 170 S pF pF pF nC nC nC ns ns ns ns 0.75 mJ ns ns mJ ns ns mJ 0.90 K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
ISOPLUS 247 OUTLINE
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IT; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
Reverse Diode (FRED) Symbol VF IRM trr RthJC Note: 1. IT = 32A Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 150C TJ = 25C 6 100 25 1.6 2.5 V V A ns ns 1.15 K/W
IF = IT, VGE = 0 V, Pulse test t 300 s, duty cycle d 2 %
IF = IT, VGE = 0 V, -diF/dt = 100 A/s VR = 100 V TJ = 100C IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ = 25C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585
IXGR 32N60CD1
100
TJ = 25C
200
VGE = 15V 13V 11V
9V
TJ = 25C
80
160
VGE = 15V
13V
11V
IC - Amperes
IC - Amperes
60 40 20
5V
120
9V
80 40 0
7V 5V
7V
0
0
1
2
3
4
5
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 1. Output Characteristics
100
TJ = 125C VGE = 15V 11V 9V
Fig. 2. Extended Output Characteristics
1.50
VCE (sat) - Normalized
80
13V
VGE = 15V
1.25
IC = 64A
IC - Amperes
60 40 20
5V 7V
1.00
IC = 32A IC = 16A
0.75
0
0
1
2
3
4
5
0.50
25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. High Temperature Output Characteristics
100 80 Capacitance - pF 10000
Fig. 4. Temperature Dependence of VCE(sat)
VCE = 10V
Ciss
f = 1Mhz
IC - Amperes
60 40
TJ = 125C
1000
Coss
100
Crss
20
TJ = 25C
0
3
4
5
6
7
8
9
10
10
0
5
10
15
20
25
30
35
40
VGE - Volts
VCE-Volts
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves
(c) 2004 IXYS All rights reserved
IXGR 32N60CD1
1.00
TJ = 125C
4
RG = 10 E(OFF)
4
TJ = 125C
8
E(ON) - millijoules
E(ON) - millijoules
0.75
E(ON)
3
3
E(ON)
IC = 64A E(OFF)
6
E(OFF) - milliJoules
E(OFF) - millijoules
0.50
2
2
E(ON) IC = 32A IC = 16A E(OFF)
4
0.25
1
1
E(ON)
2
0.00
0
20
40
60
80
0
0
E(OFF)
0
10
20
30
40
50
60
0
IC - Amperes
RG - Ohms
Fig. 7. Dependence of EON and EOFF on IC.
16
IC = 32A VCE = 300V
Fig. 8. Dependence of EON and EOFF on RG.
100
64
12
IC - Amperes
VGE - Volts
10
TJ = 125C
RG = 4.7 dV/dt < 5V/ns
8
1
4
0
0
25
50
75
100
125
0.1
0
100
200
300
400
500
600
Qg - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
1
D=0.5 D=0.2
Fig. 10. Turn-off Safe Operating Area
ZthJC (K/W)
0.1 D=0.1
D=0.05 D=0.02 D=0.01 Single pulse
0.01
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGR 32N60CD1
60 A 50 IF 40 1000
TVJ= 100C nC VR = 300V IF= 60A IF= 30A IF= 15A
800 Qr
TVJ=150C
30 20
600
T = 100C A VVJ = 300V R 25 IF= 60A IRM IF= 30A 20 IF= 15A
15
30
TVJ=100C TVJ=25C
400 10 200 5 0
10 0
0
1
2 VF
3V
0 100
A/s 1000 -diF/dt
0
200
400
600 A/s 1000 800 -diF/dt
Fig. 12. Forward current IF versus VF
Fig. 13. Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 14. Peak reverse current IRM versus -diF/dt
20 V VFR 15
2.0
TVJ= 100C VR = 300V
TVJ= 100C IF = 30A VFR tfr
1.00 tfr 0.75 s
1.5 Kf 1.0
trr 80
IRM
70 0.5
IF= 60A IF= 30A IF= 15A
10
0.50
Qr
60
5
0.25
0.0
0
40
80
120 C 160 TVJ
0
200
400
600 -diF/dt
800 A/s 1000
0
0
200
400
0.00 600 A/s 1000 800 diF/dt
Fig. 15. Dynamic parameters Qr, IRM versus TVJ
10 K/W 1 ZthJC 0.1
Fig. 16. Recovery time trr versus -diF/dt
Fig. 17. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.436 0.482 0.117 0.115 ti (s) 0.0055 0.0092 0.0007 0.0418
0.01
0.001
DSEP 2x31-06B
0.0001 0.00001
0.0001
0.001
0.01
0.1
s t
1
Fig. 18. Transient thermal resistance junction to case
(c) 2004 IXYS All rights reserved

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